PVD Lab.
PVD Lab.
□ Facing Targets Sputtering System
- Synthesis of high quality transparent conductive thin film using high density low temperature plasma for digital electronics
- Target size: 250 Х 100 mm2
- Target materials: TCO (ITO, AZO, IGO)
□ ICP assisted CFUBM Sputtering System
- Synthesis of high quality microcrystalline silicon thin film by using high density low temperature plasma
- Target size: φ 4 inch (2 ea)
- Target materials: Si (doped / undoped)
□ CFUBM Sputtering System
- Synthesis of carbon and metal (Mo, Al) thin films by using high density low temperature plasma
- Target size: φ 4 inch (2 ea)
- Target materials: C, Metal (Mo, Al etc)
□ Multi Magnetron Sputtering System
- Synthesis of metal, metal oxide, metal nitride, and multi-layer thin films at low temperature
- Target size: φ 2 inch (4ea)
- Target materials: Al, Cr, Cu, Si, Ti, Ta, Metal oxides, Metal nitrides
□ 8 inch Magnetron Sputtering System (I)
- Synthesis of meta and metal oxide thin films on 6 inch substrates
- Target size: φ 8 inch (2 ea)
- Target materials: Cu, Ti, Si, TiOx, SiOx, ZnO
□ E-beam Evaporation System (I)
- Synthesis of metal, metal oxide, and multi-layer thin films
- Source materials: Al(O), Si(O), Ti(O) etc.
□ Dual Magnetron Sputtering System
- Synthesis of high quality transparent conductive thin film by using dual magnetron sputtering source at low temperature
- Target size: 520 Х 100 mm2 (2 ea)
- Target materials: TCO (ITO, AZO, IGO)


Facing Targets Sputtering System
- Synthesis of high quality transparent conductive thin film using high density low temperature plasma for digital electronics
- Target size: 250 Х 100 mm2 (2 ea)
- Target materials: TCO (ITO, AZO, IGO)


ICP assisted CFUBM Sputtering System
- Synthesis of high quality microcrystalline silicon thin film by using high density low temperature plasma
- Target size: φ 4 inch (2 ea)
- Target materials: Si (doped / undoped)


CFUBM Sputtering System
- Synthesis of carbon and metal (Mo, Al) thin films by using high density low temperature plasma
- Target size: φ 4 inch (2 ea)
- Target materials: C, Metal (Mo, Al , etc.)


Multi Magnetron Sputtering System
- Synthesis of metal, metal oxide, metal nitride, and multi-layer thin films at low temperature
- Target size: φ 2 inch (4ea)
- Target materials: Al, Cr, Cu, Si, Ti, Ta, Metal oxides, Metal nitrides


8 inch Magnetron Sputtering System (I)
- Synthesis of meta and metal oxide thin films on 6 inch substrates
- Target size: φ 8 inch (2 ea)
- Target materials: Cu, Ti, Si, TiOx, SiOx, ZnO


Dual Magnetron Sputtering System
- Synthesis of high quality transparent conductive thin film by using dual magnetron sputtering source at low temperature
- Target size: 520 Х 100 mm2 (2 ea)
- Target materials: TCO (ITO, AZO, IGO)


E-beam Evaporation System (I)
- Synthesis of metal, metal oxide, and multi-layer thin films
- Source materials: Al(O), Si(O), Ti(O) etc.