Clean Room Device Fab.
Clean Room Device Fab.
□ 8 inch Magnetron Sputtering System (II)
- Synthesis of meta and metal nitride thin films on 6 inch wafer
- Target size: φ 8 inch (1ea)
- Target materials: Al, Cr, Cu, Ti, Ta, AlN, CrN, TiN, TaN
□ E-beam Evaporation System (II)
- Synthesis of metal thin film for TFT device electrode
- Source materials: Al, Cr, Cu, Ti, Ta, W, etc.
□ Organic Thermal Evaporation System (I)
- Synthesis of organic materials and metallization
- Load-locked system
- Two Thermal Source
- Substrate size: 4 inch wafer
□ Organic Thermal Evaporation System (II)
- Synthesis of organic material for OTFT and contact materials (Au, Al)
- Load-locked system
- Substrate size: 4 inch wafer
□ Jusung Eureka 2000 PECVD System
- Etching and synthesis of silicon compound thin film
- Source size: φ 8 inch
- Film materials: SiOx, SiON, SiNx
□ Cu MOCVD System
- Direct super-conformal gap-fill of Cu and Cu alloy below 30 nm trench
- Source size: φ 6 inch
- Film materials: Cu, Cu alloy
□ Dielectric ICP Etcher (Lam TCP 9100)
- Etching of dielectric materials by using planar ICP source
- Source size: φ 8 inch
- Etching materials: SiO2/Si3N4, low-k, dielectric, polymer, glass/quartz
□ Conductor ICP Etcher (Lam TCP 9400)
- Etching of metal and semiconductor materials by using ICP source
- Source size: φ 8 inch
- Etching materials: Poly-Si, Si, Al, Pt, ZnO, Ta, TaN, PZT
□ Dual Frequency Superimposed CCP Etcher
- Etching of various materials by using dual frequency CCP
- Source size: φ 8 inch
- Etching materials: SiO2/Si3N4, Low-k, Dielectrics, Polymer
□ Chemical Dry Etcher
- Plasma etching by using microwave
- Source size: φ 6 inch
- Etching materials: isotropic photo resist, stripping
□ Ink-Jet Printer
- Dielectric coating and metallization process
- 30㎛ patterning process
□ Radical Assisted Oxidation System
- Annealing, oxidation and radical assisted oxidation
- Source size: φ 6 inch
- Materials: Ozone, O2, N2O
□ Contact Aligner
- I-line (365nm)
- Photoresist: SU-8, KMPR (negative), AZ (positive)
□ Spin Coater
- PR, polymer, and semiconductor coatings
- Max speed 8,000 rpm
- Materials: PR (SU-8 , AZ series), Polymer (polyimide, PVP), Organic semiconductor (P3HT)


8 inch Magnetron Sputtering System (II)
- Synthesis of meta and metal nitride thin films on 6 inch wafer
- Target size: φ 8 inch (1ea)
- Target materials: Al, Cr, Cu, Ti, Ta, AlN, CrN, TiN, TaN


E-beam Evaporation System (II)
- Synthesis of metal thin film for TFT device electrode
- Source materials: Al, Cr, Cu, Ti, Ta, W, etc.


Organic Thermal Evaporation System (I)
- Synthesis of organic materials and metallization
- Load-locked system
- Two Thermal Source
- Substrate size: 4 inch wafer


Organic Thermal Evaporation System (II)
- Synthesis of organic material for OTFT and contact materials (Au, Al)
- Load-locked system
- Substrate size: 4 inch wafer


Jusung Eureka 2000 PECVD System
- Etching and synthesis of silicon compound thin film
- Source size: φ 8 inch
- Film materials: SiOx, SiON, SiNx


Cu MOCVD System
- Direct super-conformal gap-fill of Cu and Cu alloy below 30 nm trench
- Source size: φ 6 inch
- Film materials: Cu, Cu alloy


Dielectric ICP Etcher (Lam TCP 9100)
- Etching of dielectric materials by using planar ICP source
- Source size: φ 8 inch
- Etching materials: SiO2/Si3N4, low-k dielectrics, polymer, glass/quartz


Conductor ICP Etcher (Lam TCP 9400)
- Etching of metal and semiconductor materials by using ICP source
- Source size: φ 8 inch
- Etching materials: Poly-Si, Si, Al, Pt, ZnO, Ta, TaN, PZT


Dual Frequency Superimposed CCP Etcher
- Etching of various materials by using dual frequency CCP
- Source size: φ 8 inch
- Etching materials: SiO2/Si3N4, Low-k Dielectrics, Polymer


Chemical Dry Etcher
- Plasma etching by using microwave
- Source size: φ 6 inch
- Etching materials: isotropic photo resist stripping


Ink-Jet Printer
- Dielectric coating and metallization process
- 30㎛ patterning process


Radical Assisted Oxidation System
- Annealing, oxidation and radical assisted oxidation
- Source size: φ 6 inch
- Materials: Ozone, O2, N2O


Contact Aligner
- I-line (365nm)
- Photoresist: SU-8, KMPR (negative), AZ (positive)


Spin Coater
- PR, polymer, and semiconductor coatings
- Max speed 8,000 rpm
- Materials: PR(SU-8, AZ series), Polymer(polyimide, PVP), Organic semiconductor(P3HT)