Digital Electronic Film
Digital Electronic Film
- Theoretical design of thin film structure basing on energy theory for thin film formation
- Thin film materials: Metal, Oxide, Nitride and Compound
- Film structure: Nano crystalline, dense or porous film, stress free, surface roughness control, multi layer structure, etc.

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Thin film material for digital electronics
1) Transparent Conductive Thin Films
- Film material: ITO(InSnO), IZO(InZnO), AZO(AlZnO), GZO(GaZnO), etc
- Film properties: 30 ~ 100 ohm /  (Thickness : 100 ~ 500 nm)
- Substrate material/Size: Glass, Polymer(PET, PC, PI, etc) / max. 200mmx200mm
- Deposition process: Single/dual magnetron sputtering (DC, Pulsed DC, RF)
- Deposition temperature: < 100 ℃
- Core technology: Thin film properties controlled by low temperature high density plasma sputtering process design.

2) Functional Compound and Metal Film
- Compound film: ZnO, TiOx, TiN, SiNx, AlOx, SiOx etc
- Metal film: Al, Cu, Mo, W, Cr, Ni, C, etc.
- Film properties: Optical & conductive proerties, Photo-catalyst, Electrode
- Substrate materials: Glass, Polymer, Metal and Ceramic
- Deposition process: Magnetron Sputtering, High density PECVD
- Deposition temperature: 50 ~ 200 ℃
- Core technology: High quality thin film at low temperature, plasma source design and plasma diagnostics, control of thin film properties such as microstructure, electrical and optical properties, residual stress, etc.

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