Flexible Electronics Film
Flexible electronics thin film
1) Barrier film
- Film materials: SiOx / SiOxNy film, Single & Multi-layer film
- Film properties: WVTR TFT-LCD 1×10-2, OLED 1×10-6 g/cm2/day , Transmittance >85% , Thickness 1 ~ 7 um
- Substrate materials: PET, PC, PI, PEN, etc..
- Coating process: RF, UHF PEMOCVD using high-speed high-density plasma deposition (0.2 um / min)
- Coating temperature: 50 ~ 100℃
- Core Technology: High density thin film deposition control at low temperature by controlling radical and particle velocity

2) Flexible TFT device film
- Film materials: crystalline Si, SiNx 등
- Film property: Semiconducting nano- crystalline thin films
- Substrate materials: PI (polyimide), PEN, etc., High transparency polymer at high temperature
- Coating processes: Magnetron sputtering plasma high-density, high-density plasma PECVD
- Coating temperature: 200 ~ 300 ℃
- Core Technology: Film structure controlled at low temperature by controlling plasma density and radicals

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Film Thickness
(µm)
Transmittance
(%)
Film Color
0.1 92.3 No color
0.2 92.4 No color
0.5 92.9 No color
1 92 No color
3 92.6 No color
5 92.2 No color
7 92 No color
SEM cross-section of the SiOx film Transparency thickness chart