디바이스공정연구실(Clean Room)
디바이스 공정 연구실
8 inch Magnetron Sputtering System (II)
· 6 inch크기의 웨이퍼에 균일하게 다양한 금속 및 질화물 합성
· Target size: φ 8 inch (1ea)
· Target materials: Al, Cr, Cu, Ti, Ta, AlN, CrN, TiN, TaN
E-beam Evaporation System (II)
· TFT 소자 전극용 금속 박막 합성
· Source materials: Al, Cr, Cu, Ti, Ta, W, etc.
Organic Thermal Evaporation System (I)
· 유기물 합성 및 금속의Metallization Test System
· Load-locked system
· Two Thermal Source
· Substrate size: 4 inch wafer
Organic Thermal Evaporation System (II)
· OTFT용 유기물 및 접점 재료 (Au, Al) 합성
· Load-locked system
· Substrate size: 4 inch wafer
Jusung Eureka 2000 PECVD System
· 에칭 및 실리콘 화합물 박막 합성
· Source size: φ 8 inch
· Film materials: SiOx, SiON, SiNx
Cu MOCVD System
· 30 nm 이하의 trench 코팅 장비
· Source size: φ 6 inch
· Film materials: Cu, Cu alloy
Dielectric ICP Etcher (Lam TCP 9100)
· 다양한 종류의 절연체 에칭을 위한 장비
· Source size: φ 8 inch
· Etching materials: SiO2/Si3N4, low-k, dielectric, polymer, glass/quartz
Conductor ICP Etcher (Lam TCP 9400)
· 금속 및 반도체 재료 에칭을 위한 장비
· Source size: φ 8 inch
· Etching materials: Poly-Si, Si, Al, Pt, ZnO, Ta, TaN, PZT
Dual Frequency Superimposed CCP Etcher
· 듀얼 주파수를 이용한 플라즈마 에칭 장비
· Source size: φ 8 inch
· Etching materials: SiO2/Si3N4, Low-k, Dielectrics, Polymer
Chemical Dry Etcher
· 마이크로웨이브를 이용한 플라즈마 에칭 장비
· Source size: φ 6 inch
· Etching materials: isotropic photo resist, stripping
Ink-Jet Printer
· Dielectric coating and metallization 공정장비
· 30㎛ patterning 공정
Radical Assisted Oxidation System
· 산화 및 열처리 장비
· Source size: φ 6 inch
· Materials: Ozone, O2, N2O
Contact Aligner
· I-line (365nm)
· Photoresist: SU-8, KMPR (negative), AZ (positive)
Spin Coater
· PR, polymer, 반도체 코팅장비
· Max speed 8,000 rpm
· Materials: PR (SU-8 , AZ series), Polymer (polyimide, PVP), Organic semiconductor (P3HT)


8 inch Magnetron Sputtering System (II)
· 6 inch크기의 웨이퍼에 균일하게 다양한 금속 및 질화물 합성
· Target size: φ 8 inch (1ea)
· Target materials: Al, Cr, Cu, Ti, Ta, AlN, CrN, TiN, TaN


E-beam Evaporation System (II)
· TFT 소자 전극용 금속 박막 합성
· Source materials: Al, Cr, Cu, Ti, Ta, W, etc.


Organic Thermal Evaporation System (I)
· 유기물 합성 및 금속의Metallization Test System
· Load-locked system
· Two Thermal Source
· Substrate size: 4 inch wafer


Organic Thermal Evaporation System (II)
· OTFT용 유기물 및 접점 재료 (Au, Al) 합성
· Load-locked system
· Substrate size: 4 inch wafer


Jusung Eureka 2000 PECVD System
· 에칭 및 실리콘 화합물 박막 합성
· Source size: φ 8 inch
· Film materials: SiOx, SiON, SiNx


Cu MOCVD System
- 30 nm 이하의 trench 코팅 장비
- Source size: φ 6 inch
· Film materials: Cu, Cu alloy


Dielectric ICP Etcher (Lam TCP 9100)
· 다양한 종류의 절연체 에칭을 위한 장비
· Source size: φ 8 inch
· Etching materials: SiO2/Si3N4, low-k dielectrics, polymer, glass/quartz


Conductor ICP Etcher (Lam TCP 9400)
· 금속 및 반도체 재료 에칭을 위한 장비
· Source size: φ 8 inch
· Etching materials: Poly-Si, Si, Al, Pt, ZnO, Ta, TaN, PZT


Dual Frequency Superimposed CCP Etcher
· 듀얼 주파수를 이용한 플라즈마 에칭 장비
· Source size: φ 8 inch
· Etching materials: SiO2/Si3N4, Low-k Dielectrics, Polymer


Chemical Dry Etcher
· 마이크로웨이브를 이용한 플라즈마 에칭 장비
· Source size: φ 6 inch
· Etching materials: isotropic photo resist stripping


Ink-Jet Printer
· Dielectric coating and metallization 공정장비
· 30㎛ patterning 공정


Radical Assisted Oxidation System
· 산화 및 열처리 장비
· Source size: φ 6 inch
· Materials: Ozone, O2, N2O


Contact Aligner
· I-line (365nm)
· Photoresist: SU-8, KMPR (negative), AZ (positive)


Spin Coater
· PR, polymer, 반도체 코팅장비
· Max speed 8,000 rpm
· Materials: PR(SU-8, AZ series), Polymer(polyimide, PVP), Organic semiconductor(P3HT)